?2007 fairchild semiconductor corporation 1 www.fairchildsemi.com fjv42 rev. a fjv42 npn high voltage transistor march 2007 fjv42 npn high voltage transistor absolute maximum ratings * t a = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may by impaired. thermal characteristics electrical charact eristics t c = 25c unless otherwise noted * pulse test: pw 300 s, duty cycle 2% symbol parameter value units v cbo collector-base voltage 350 v v ceo collector-emitter voltage 350 v v ebo emitter-base voltage 6 v i c collector current 500 ma t stg storage temperature range -55~150 c p c collector power dissipation 350 mw symbol parameter value units r th (j-a) thermal resistance, junction to ambiet 357 c/w symbol parameter test condition min max units v (br)ceo collector-emitter breakdown voltage * i c = 5.0 ma, i b = 0 350 v v (br)cbo collector-base breakdown voltage i c = 100 ua, i e = 0 350 v v (br)ebo emitter-base breakdown voltage i e = 100 ua, i c = 0 6 v i cbo collector-cutoff current v cb = 200 v, i e = 0 0.1 ua i ebo emitter-cutoff current v eb = 5.0 v, i c = 0 0.1 ua h fe dc current gain * i c = 1.0 ma, v ce = 10 v i c = 10 ma, v ce = 10 v i c = 30 ma, v ce = 10 v 25 40 40 v ce( sat ) collector-emitter saturation voltage * i c = 20 ma, i b = 2.0 ma 0.5 v v be( sat ) base-emitter breakdown voltage * i c = 20 ma, i b = 2.0 ma 0.9 v f t current gain - bandwidth product i c = 10 ma, v ce = 20v, f =100 mhz 50 mhz c cb output capacitance v cb = 20 v, i e = 0, f = 1.0 mhz 3 pf 1. base 2. emitter 3. collector sot-23 1 2 3 marking: 1df
2 www.fairchildsemi.com fjv42 rev. a fjv42 npn high voltage transistor typical characteristics figure 1. dc current gain figure 2. collector-emitter saturation voltage base-emitter saturation voltage figure 3. collector-base capacitance figure 4. current gain bandwidth product 110100 10 100 1000 v ce = 10v h fe , dc current gain i c [ma], collector current 110100 0.01 0.1 1 10 i c = 10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current 0.1 1 10 100 1 10 100 i e = 0 f = 1mhz c cb [pf], capacitance v cb [v], collector-base voltage 110100 0 20 40 60 80 100 120 v ce = 20v f t [mhz], current gain bandwidth product i c [ma], collector current
3 www.fairchildsemi.com fjv42 rev. a fjv42 npn high voltage transistor 0.96~1.14 0.12 0.03~0.1 0 0.38 re f 0.40 0.03 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508ref 0.97ref 1.30 0.10 0.45~0.60 2.40 0.10 +0.05 ?.02 3 0.20 mi n 0.40 0.03 sot-23 package dimensions dimensions in millimeters
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